SPDT GaAs switches with copper metallized interconnects

IEEE Microwave and Wireless Components Letters

Volumn 17, Issue 2, 2007, Pages 133-135

  Wu, Y C ^b   Chang, E Y ^a,b   Lin, Y C ^b   Hsu, H T ^c   Chen, S H ^b   Wu, W C ^b   Chu, L H ^b   Chang, C Y ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c YUAN ZE UNIVERSITY   (Taiwan)

Author keywords

Copper metallization; GaAs psedomophic high electron mobility transistor (PHEMT); Platinum; Single pole double throw (SPDT); Switch

Indexed keywords

COPPER METALLIZATION; GAAS PSEDOMOPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR (PHEMT); SINGLE-POLE-DOUBLE-THROW (SPDT);

COPPER; DIFFUSION; HIGH ELECTRON MOBILITY TRANSISTORS; INSERTION LOSSES; METALLIZING; PLATINUM; SWITCHES; THERMODYNAMIC STABILITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33847707413     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2006.890340     Document Type: Article

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