Gold-free fully Cu-metallized InGaP/GaAs heterojunction bipolar transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 8-11

  Chang, Shang Wen ^a   Chang, Edward Yi ^a   Biswas, Dhrubes ^a   Lee, Cheng Shih ^a   Chen, Ke Shian ^a   Tseng, Chao Wei ^a   Hsieh, Tung Ling ^a   Wu, Wei Cheng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Copper; Diffusion barrier; GaAs; HBT; Metallization

Indexed keywords

ANNEALING; COPPER; CURRENT DENSITY; GOLD; INDIUM COMPOUNDS; MESFET DEVICES; METALLIZING; PLATINUM; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

DIFFUSION BARRIERS; GAAS; INTERCONNECT METALS; SHEET RESISTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 15544389654     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.8     Document Type: Article

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