Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applications

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1753-1758

  Lee, Cheng Shih ^a   Lien, Yi Chung ^a   Chang, Edward Yi ^a   Chang, Huang Choung ^a   Chen, Szu Houng ^a   Lee, Ching Ting ^b   Chu, Li Hsin ^a   Chang, Shang Wen ^a   Hsieh, Yen Chang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Airbridge; Copper metallization; Diffusion barrier; GaAs; Noise figure; Pseudomorphic HEMT (PHEMT)

Indexed keywords

ADHESION; COPPER; DIFFUSION; METALLIZING; MULTILAYERS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE; SPUTTERING;

AIRBRIDGE; DIFFUSION BARRIER; NOISE FIGURE; PSEUDOMORPHIC HEMT (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746636430     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.876578     Document Type: Article

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