Temperature dependence of frequency response characteristics in organic field-effect transistors

Applied Physics Letters

Volumn 100, Issue 18, 2012, Pages

  Lu, Xubing ^a,b   Minari, Takeo ^b,c   Liu, Chuan ^b   Kumatani, Akichika ^b   Liu, J M ^a,d   Tsukagoshi, Kazuhito ^b,e  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c RIKEN   (Japan)

^d NANJING UNIVERSITY   (China)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING CURRENT; CAPACITANCE VOLTAGE CHARACTERISTIC; DYNAMIC CHARACTERISTICS; ELECTRONIC DEVICE; FAST CHARGES; FLAT-BAND VOLTAGE; FREQUENCY DISPERSION; FREQUENCY RESPONSE CHARACTERISTIC; GATE VOLTAGES; HIGH FREQUENCY; HIGH-SPEED OPERATION; LOW TEMPERATURES; METAL INSULATORS; NEGATIVE SHIFT; SEMICONDUCTOR CAPACITORS; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; CUTOFF FREQUENCY; MIS DEVICES; MOS CAPACITORS; ORGANIC FIELD EFFECT TRANSISTORS;

TEMPERATURE DISTRIBUTION;

EID: 84862531496     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4711211     Document Type: Article

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