Temperature and electric-field dependence of the mobility of a single-grain pentacene field-effect transistor

Journal of Applied Physics

Volumn 99, Issue 3, 2006, Pages

  Minari, Takeo ^a   Nemoto, Takashi ^a   Isoda, Seiji ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRODES; HYSTERESIS; SATURATION (MATERIALS COMPOSITION);

ORGANIC FIELD-EFFECT TRANSISTOR (OFET); PENTACENE FIELD-EFFECT TRANSISTOR; SATURATION MOBILITY;

FIELD EFFECT TRANSISTORS;

EID: 33645529854     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2169872     Document Type: Article

References (22)

1. G. Horowitz, Adv. Mater. (Weinheim, Ger.) 10, 365 (1998).
2. Y. Y. Lin, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 72, 1854 (1998).
3. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) 14, 99 (2002).
4. R. W. I. de Boer, M. E. Gershenson, A. F. Morpurgo, and V. Podzorov, Phys. Status Solidi A 201, 1302 (2004).
5. C. R. Newman, R. J. Chesterfield, J. A. Merlo, and C. D. Frisbie, Appl. Phys. Lett. 85, 422 (2004).
6. J. Takeya, C. Goldmann, S. Haas, K. P. Pernstich, B. Ketterer, and B. Batlogg, J. Appl. Phys. 94, 5800 (2003).
7. V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, J. A. Rogers, and M. E. Gershenson, Phys. Rev. Lett. 93, 086602 (2004).
8. V. C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, T. Someya, M. E. Gershenson, and J. A. Rogers, Science 303, 1644 (2004).
9. I. P. M. Bouchoms, W. A. Schoonveld, J. Vrijmoeth, and T. M. Klapwijk, Synth. Met. 104, 175 (1999).
10. K. Seshadri and C. D. Frisbie, Appl. Phys. Lett. 78, 993 (2001).
11. W. A. Schoonveld, J. Vrijmoeth, and T. M. Klapwijk, Appl. Phys. Lett. 73, 3884 (1998).
12. A. B. Chwang and C. D. Frisbie, J. Phys. Chem. B 104, 12202 (2000).
13. W. A. Schoonveld, J. Wildeman, D. Fichou, P. A. Bobbert, B. J. van Wees, and T. M. Klapwijk, Nature (London) 404, 977 (2000).
14. J. Luo, M. Haller, H. Li, T.-D. Kim, and A. K.-Y. Jen, Adv. Mater. (Weinheim, Ger.) 15, 1635 (2003).
15. L. Wang, D. Fine, T. Jung, D. Basu, H. von Seggern, and A. Dodabalapur, Appl. Phys. Lett. 85, 1772 (2004).
16. T. Minari, T. Nemoto, and S. Isoda, J. Appl. Phys. 96, 769 (2004).
17. The effect of the spreading current is usually taken into account when the W/L ratio of the device is less than 10. In the present case, however, most of the spreading current may flow across the grain boundaries. Since such current is several times (or several orders at low temperatures) smaller than that flowing in a grain, as one can see in Fig. 5 (a), the spreading current was taken no account when the mobility was calculated.
18. L. Pautmeier, R. Richert, and H. Bassler, Synth. Met. 37, 271 (1990).
19. W. D. Gill, J. Appl. Phys. 43, 5033 (1972).
20. L. B. Schein, A. Peled, and D. Glatz, J. Appl. Phys. 66, 686 (1989).
21. K. Waragai, H. Akimichi, S. Hotta, and H. Kano, Phys. Rev. B 52, 1786 (1995).
22. B. H. Hamadani and D. Natelson, J. Appl. Phys. 95, 1227 (2004).