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Volumn 96, Issue 1, 2004, Pages 769-772

Fabrication and characterization of single-grain organic field-effect transistor of pentacene

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CHARACTERIZATION; ELECTRONIC STRUCTURE; FABRICATION; ION BEAMS; POLARONS; POLYCRYSTALLINE MATERIALS; THERMAL EFFECTS;

EID: 3142754470     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1760237     Document Type: Article
Times cited : (77)

References (19)
  • 18
    • 3142759070 scopus 로고    scopus 로고
    • note
    • 2 surface was treated by OTS. The pentacene film of the device was deposited at a substrate temperature of 353 K and deposition rate of 0.1 nm/s. The temperature-independent property has never been observed without OTS treatment in our studies.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.