Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5053-5057

  Longo, M ^a   Salicio, O ^a   Wiemer, C ^a   Fallica, R ^a   Molle, A ^a   Fanciulli, M ^a,b   Giesen, C ^c   Seitzinger, B ^c   Baumann, P K ^c   Heuken, M ^c   Rushworth, S ^d  

^a INFM   (Italy)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c AIXTRON AG   (Germany)

^d SAFC Hitech   (United Kingdom)

Author keywords

A3. MOCVD; B1. Chalcogenides; B3. Non volatile memories

Indexed keywords

CHALCOGENIDES; CHEMICAL VAPOR DEPOSITION; DATA STORAGE EQUIPMENT; ELECTRIC RESISTANCE; FILMS; GERMANIUM; GRAIN GROWTH; INORGANIC COMPOUNDS; KNOWLEDGE BASED SYSTEMS; PULSE CODE MODULATION; SILICON; SILICON COMPOUNDS; SUBSTRATES; SYSTEM THEORY; TELLURIUM COMPOUNDS;

A3. MOCVD; B1. CHALCOGENIDES; B3. NON-VOLATILE MEMORIES; CHALCOGENIDE MATERIALS; CONTINUOUS LAYERS; CRYSTAL NUCLEATIONS; CRYSTALLINE GRAINS; DIFFERENT SUBSTRATES; ELECTRICAL SHEET RESISTANCES; FILM QUALITIES; GROWTH PARAMETERS; ISLAND GROWTHS; MOCVD GROWTHS; PATTERNED SUBSTRATES; PROCESS GASSES; SI SUBSTRATES; STEP COVERAGES; SYSTEMATIC STUDIES; UNIFORM COATINGS; VOLATILE MEMORIES;

PHASE CHANGE MEMORY;

EID: 56249134860     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.054     Document Type: Article

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