Investigation of arsenic-doped ZnO thin films grown on Si substrate by atmospheric-pressure metal-organic chemical vapor deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 6, 2012, Pages 1053-1058

  Hung, S C ^a   Wang, K J ^b   Lan, S M ^b,c   Yang, T N ^c   Uen, W Y ^b   Chi, G C ^d  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

annealing; doping; MOCVD; zinc oxide

Indexed keywords

AMBIENT GAS; DIETHYLZINC; IN-SITU; IN-SITU ANNEALING; P-TYPE CONDUCTIVITY; PHYSICAL MECHANISM; SEMI-INSULATING; SI SUBSTRATES; ZINC OXIDE (ZNO); ZNO THIN FILM;

ANNEALING; ARSENIC; DOPING (ADDITIVES); METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL FILMS; SILICON; VAPORS; ZINC OXIDE;

ZINC;

EID: 84862218515     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127318     Document Type: Article

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