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Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

Impact of strain on deep ultraviolet nitride laser and light-emitting diodes

(2) Sharma, T K a,b Towe, E a

a CARNEGIE MELLON UNIVERSITY (United States)

b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL ANALYSIS; CRYSTALLINE QUALITY; DEEP ULTRAVIOLET; DEEP ULTRAVIOLET LASERS; FUNDAMENTAL LIMITATIONS; POLARIZATION PROPERTIES; QUANTUM WELL; QUANTUM-CONFINEMENT EFFECTS; RESIDUAL STRAINS;

LASERS; LIGHT EMITTING DIODES; NITRIDES; QUANTUM WELL LASERS;

ULTRAVIOLET LASERS;

EID: 79955728983 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3569835 Document Type: Article

Times cited : (8)

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