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Volumn 516, Issue 23, 2008, Pages 8524-8529

Synthesis of ZnO nanorods on GaN epitaxial layer and Si (100) substrate using a simple hydrothermal process

Author keywords

GaN epitaxial layer; Hydrothermal process; Nanorod; Optical electronic device; Photoluminescence; Transmission electron microscopy; X ray diffraction; ZnO

Indexed keywords

EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FIELD EMISSION; GALLIUM NITRIDE; HYDROTHERMAL SYNTHESIS; IMAGING TECHNIQUES; MOLECULAR BEAM EPITAXY; NANORODS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; OPTICAL DESIGN; OPTICAL ENGINEERING; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; SOLUTIONS; SUBSTRATES; ZINC ALLOYS; ZINC OXIDE;

EID: 50849097225     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.05.017     Document Type: Article
Times cited : (24)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.