|
Volumn 516, Issue 23, 2008, Pages 8524-8529
|
Synthesis of ZnO nanorods on GaN epitaxial layer and Si (100) substrate using a simple hydrothermal process
|
Author keywords
GaN epitaxial layer; Hydrothermal process; Nanorod; Optical electronic device; Photoluminescence; Transmission electron microscopy; X ray diffraction; ZnO
|
Indexed keywords
EMISSION SPECTROSCOPY;
EPITAXIAL GROWTH;
EPITAXIAL LAYERS;
FIELD EMISSION;
GALLIUM NITRIDE;
HYDROTHERMAL SYNTHESIS;
IMAGING TECHNIQUES;
MOLECULAR BEAM EPITAXY;
NANORODS;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
OPTICAL DESIGN;
OPTICAL ENGINEERING;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
SILICON;
SOLUTIONS;
SUBSTRATES;
ZINC ALLOYS;
ZINC OXIDE;
AQUEOUS SOLUTIONS;
BROAD BANDS;
FIELD-EMISSION SCANNING ELECTRON MICROSCOPY;
GAN EPI LAYER;
GAN EPITAXIAL LAYER;
HYDROTHERMAL METHODS;
HYDROTHERMAL PROCESS;
HYDROTHERMAL PROCESSING;
NANO STRUCTURING;
NANOROD;
NANOROD STRUCTURES;
ONE-DIMENSIONAL;
OPTICAL ELECTRONIC DEVICE;
PHOTOLUMINESCENCE;
PHOTOLUMINESCENCE SPECTRUM;
SI SUBSTRATE;
SINGLE-CRYSTALLINE;
TRANSMISSION ELECTRON MICROSCOPY;
ULTRA-VIOLET;
WELL-ALIGNED;
X-RAY DIFFRACTION;
YELLOW EMISSIONS;
ZNO;
ZNO NANOROD ARRAYS;
ZNO NANORODS;
GALLIUM ALLOYS;
|
EID: 50849097225
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.05.017 Document Type: Article |
Times cited : (24)
|
References (30)
|