Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter

Journal of Electroceramics

Volumn 28, Issue 1, 2012, Pages 74-79

  Park, Jin Seong ^a  

^a Dankook University   (South Korea)

Author keywords

InGaZnO; Load invertor; Oxide thin filmtransistor; Short channel

Indexed keywords

ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODES; CHANNEL LENGTH; CIRCUIT PERFORMANCE; DELAY TIME; DISPLAY INDUSTRY; DYNAMIC INVERTERS; GATE LENGTH; INGAZNO; INVERTOR; MOBILITY VALUE; MULTI-VIEWS; NEGATIVE SHIFT; SHORT CHANNELS; SHORT-CHANNEL EFFECT; SUBTHRESHOLD SLOPE; THIN-FILM TRANSISTOR (TFTS); THREE-DIMENSION; VOLTAGE GAIN;

DEGRADATION; FIELD EFFECT TRANSISTORS; GALLIUM; LIGHT EMITTING DIODES; THIN FILMS; ZINC;

THIN FILM TRANSISTORS;

EID: 84862189621     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-011-9680-5     Document Type: Article

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