Band offsets of atomic layer deposited Al2O3 and HfO2 on Si measured by linear and nonlinear internal photoemission

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 6, 2012, Pages 1160-1165

  Lei, M ^a   Yum, J H ^b,c   Banerjee, S K ^b   Bersuker, G ^c   Downer, M C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b The University of Texas at Austin   (United States)

^c SEMATECH   (United States)

Author keywords

Band offset; High k dielectrics; Internal photoemission; Second harmonic generation

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; ENERGY GAP; HAFNIUM OXIDES; HARMONIC GENERATION; HIGH-K DIELECTRIC; NONLINEAR OPTICS; PHOTOEMISSION; PHOTONS;

ANNEALED STRUCTURE; ATOMIC LAYER DEPOSITED; BAND OFFSETS; INTERNAL PHOTOEMISSION; MULTI-PHOTON PHOTOEMISSION; OPTICAL SECOND-HARMONIC GENERATION; OXIDE VALENCE BAND; POST DEPOSITION ANNEALING;

SILICON;

EID: 84862174835     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201100744     Document Type: Article

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