Highly ordered vertical silicon nanowire array composite thin films for thermoelectric devices

Journal of Electronic Materials

Volumn 41, Issue 5, 2012, Pages 887-894

  Curtin, Benjamin M ^a   Fang, Eugene W ^a   Bowers, John E ^a  

^a University of California   (United States)

Author keywords

Cross plane measurements; Interference lithography; Nanowire composite; Power generation; Silicon nanowires; Thermoelectrics

Indexed keywords

DEVICE FABRICATIONS; EFFECTIVE MEDIUM MODEL; HARD MASKS; INTERFERENCE LITHOGRAPHY; NANOWIRE COMPOSITES; PACKING DENSITY; PHOTORESIST PATTERNS; REACTIVE ION; SI NANOWIRE; SI SUBSTRATES; SILICON NANOWIRE ARRAYS; SILICON NANOWIRES; SINGLE-STEP; SQUARE LATTICES; THERMOELECTRIC DEVICES; THERMOELECTRICS; THIN-FILM CHARACTERIZATION;

COMPOSITE FILMS; NANOWIRES; PHOTORESISTS; POWER GENERATION; SILICON OXIDES; SUBSTRATES; THERMAL CONDUCTIVITY;

SILICON;

EID: 84862142352     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-1904-1     Document Type: Article

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