Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(0 0 1) substrates

Solid-State Electronics

Volumn 53, Issue 8, 2009, Pages 833-836

  Wietler, T F ^a   Laha, A ^a   Bugiel, E ^a   Czernohorsky, M ^a   Dargis, R ^a   Fissel, A ^a   Osten, H J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE STRUCTURE; CUBIC PHASE; EPITAXIAL RELATIONSHIPS; EQUIVALENT OXIDE THICKNESS; GE FILMS; GROWTH PROCESS; HIGH MOBILITY; INTERFACIAL LAYER; MATERIAL COMBINATION; MOSFETS; SI(0 0 1); STRUCTURAL PERFECTION; SURFACE ENERGIES; SURFACTANT-MEDIATED EPITAXIES;

EPITAXIAL FILMS; EPITAXIAL GROWTH; GADOLINIUM; GERMANIUM; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; SILICON; SUBSTRATES; SURFACE ACTIVE AGENTS; SURFACE CHEMISTRY; SURFACE TENSION; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649158692     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.04.027     Document Type: Article

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