Band offsets between Si and epitaxial rare earth sesquioxides (RE 2O3, RE=La,Nd,Gd,Lu): Effect of 4f -shell occupancy

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Afanas'ev, V V ^a   Badylevich, M ^a   Stesmans, A ^a   Laha, A ^b   Osten, H J ^b   Fissel, A ^b   Tian, W ^c   Edge, L F ^c   Schlom, D G ^c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; GADOLINIUM; HAFNIUM COMPOUNDS; LANTHANUM; LUTETIUM; RARE EARTH ELEMENTS; RHENIUM ALLOYS; SEMICONDUCTING SILICON COMPOUNDS; SHELLS (STRUCTURES); SILICON;

4F STATES; BAND OFFSETS; ELECTRON STATES; ENERGY RANGES; EPITAXIALLY GROWN; GAP STATES; INTERNAL PHOTOEMISSIONS; POLYCRYSTAL LINES; SELECTIVE INTERFACES;

NEODYMIUM;

EID: 56249117674     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3003872     Document Type: Article

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