Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors

Applied Physics Letters

Volumn 100, Issue 23, 2012, Pages

  Hsieh, Tien Yu ^a   Chang, Ting Chang ^a,b   Chen, Te Chih ^a   Tsai, Ming Yen ^a   Chen, Yu Te ^a   Chung, Yi Chen ^c   Ting, Hung Che ^c   Chen, Chia Yu ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CHANNEL LAYERS; DEGRADATION BEHAVIOR; LOW THERMAL CONDUCTIVITY; NON-UNIFORM DISTRIBUTION; SELF-HEATING; SELF-HEATING EFFECT; THRESHOLD VOLTAGE SHIFTS;

THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

DEGRADATION;

EID: 84862123592     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4723573     Document Type: Article

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