High-efficiency InAs/GaAs quantum dot solar cells by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 100, Issue 19, 2012, Pages

  Tanabe, Katsuaki ^a   Guimard, Denis ^a,b   Bordel, Damien ^a   Arakawa, Yasuhiko ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SEMICONDUCTORS; DUAL LAYER; HIGH-DENSITY; INAS; INAS/GAAS; QUANTUM DOT SOLAR CELLS; SELF-ASSEMBLED; TRANSITION ENERGY;

DEGRADATION; EFFICIENCY; INDIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; VAPORS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 84862068240     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4714767     Document Type: Article

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