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Volumn , Issue , 2012, Pages 881-886

A cross-layer approach for new reliability-performance trade-offs in MLC NAND flash memories

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; CONTROLLERS; ECONOMIC AND SOCIAL EFFECTS; FLASH MEMORY; NAND CIRCUITS; RELIABILITY;

EID: 84862059627     PISSN: 15301591     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/date.2012.6176622     Document Type: Conference Paper
Times cited : (28)

References (25)
  • 4
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    • Data retention characteristics of sub-100 nm NAND flash memory cells
    • Dec.
    • J.-D. Lee, J.-H. Choi, D. Park and K. Kim, "Data retention characteristics of sub-100 nm NAND flash memory cells", IEEE Electron Device Letters, vol. 24, no. 12, pp. 748-750, Dec. 2003.
    • (2003) IEEE Electron Device Letters , vol.24 , Issue.12 , pp. 748-750
    • Lee, J.-D.1    Choi, J.-H.2    Park, D.3    Kim, K.4
  • 7
    • 49649092727 scopus 로고    scopus 로고
    • White Paper: Implementing MLC NAND Flash for Cost-Effective, High Capacity Memory
    • R. Dan and R. Singer, White Paper: Implementing MLC NAND Flash for Cost-Effective, High Capacity Memory", M-Systems, 2003.
    • (2003) M-Systems
    • Dan, R.1    Singer, R.2
  • 8
    • 34547272773 scopus 로고    scopus 로고
    • A 4Gb 2b/cell NAND flash memory with embedded 5b BCH ECC for 36mb/s system read throughput
    • IEEE International, Feb.
    • R. Micheloni et al., "A 4Gb 2b/cell NAND flash memory with embedded 5b BCH ECC for 36mb/s system read throughput", in Solid-State Circuits Conference, ISSCC 2006. Digest of Technical Papers. IEEE International, Feb. 2006, pp. 497-506.
    • (2006) Solid-State Circuits Conference, ISSCC 2006. Digest of Technical Papers , pp. 497-506
    • Micheloni, R.1
  • 10
    • 77952126213 scopus 로고    scopus 로고
    • A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s
    • Feb.
    • G.G. Marotta et al., "A 3bit/cell 32Gb NAND flash memory at 34nm with 6MB/s program throughput and with dynamic 2b/cell blocks configuration mode for a program throughput increase up to 13MB/s", IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp. 444-445, Feb. 2010.
    • (2010) IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC) , pp. 444-445
    • Marotta, G.G.1
  • 12
    • 79953125956 scopus 로고    scopus 로고
    • Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off
    • C. Zambelli, D. Bertozzi, A. Chimenton and P. Olivo, "Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off", IEEE Embedded System Letters, vol. 3, no. 1, pp. 13-15, 2011.
    • (2011) IEEE Embedded System Letters , vol.3 , Issue.1 , pp. 13-15
    • Zambelli, C.1    Bertozzi, D.2    Chimenton, A.3    Olivo, P.4
  • 25
    • 77951879762 scopus 로고    scopus 로고
    • VLSI implementation of BCH error correction for multilevel cell NAND flash memory
    • 19-22 Apr.
    • H. Choi, W. Liu, and W. Sung, "VLSI implementation of BCH error correction for multilevel cell NAND flash memory" IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 18, no. 6, pp. 843-847, 19-22 Apr. 2010.
    • (2010) IEEE Transactions on Very Large Scale Integration (VLSI) Systems , vol.18 , Issue.6 , pp. 843-847
    • Choi, H.1    Liu, W.2    Sung, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.