UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation

Semiconductor Science and Technology

Volumn 26, Issue 11, 2011, Pages

  Pastor, D ^a   Olea, J ^a   Del Prado, A ^a   Garcia Hemme E ^a   Martil I ^a   Gonzalez Diaz G ^a   Ibanez J ^b   Cusco R ^b   Artus L ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; CRYSTAL QUALITIES; CRYSTALLINE LAYERS; CRYSTALLINITIES; DEGREE OF CRYSTALLINITY; HIGH DOSE; HOST LATTICE; IMPLANTED LAYERS; IMPLANTED REGION; INTERMEDIATE BANDS; NANOSECOND PULSED LASER; ORDERS OF MAGNITUDE; RAMAN SCATTERING MEASUREMENTS; SI LAYER; SOLID SOLUBILITIES; THEORETICAL PREDICTION; UV- AND; UV-RAMAN; VISIBLE RAMAN SPECTRA;

RAMAN SCATTERING; RAMAN SPECTROSCOPY; ULTRAFAST LASERS;

SILICON;

EID: 80054903672     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/11/115003     Document Type: Article

References (25)

1. Luque A and Martí A 1997 Phys. Rev. Lett. 78 5014
2. Luque A, Martí A, Antolín E and Tablero C 2006 Physica B 382 327
3. Gonzlez-Díaz G, Olea J, Mrtil I, Pastor D, Martí A, Antolín E and Luque A 2009 Sol. Energy Mater. Sol. Cells 93 1668
4. Hocine S and Mathiot D 1988 Appl. Phys. Lett. 53 1269
5. Shan W, Waluckievicz W, Ager J W III, Haller E E, Geisz J F, Friedman D J, Olson J M and Kurtz S R 1999 Phys. Rev. Lett. 82 1221
6. Yu K M, Waluckiewickz W, Wu J, Shan W, Beeman J W, Scarpulla M A, Dubon O D and Becla P 2003 Phys. Rev. Lett. 91 246403
7. Olea J, Toledano-Luque M, Pastor D, Gonzlez-Díaz G and Mrtil I 2008 J. Appl. Phys. 104 0165
8. Pastor D, Cuscó R, Arts L, Gonzlez-Díaz G, Fernndez S and Calleja E 2005 Semicond. Sci. Technol. 20 374
9. Snchez K, Aguilera I, Palacios P and Wahnón P 2010 Phys. Rev. B 79 165203
10. Shukla A K and Jain K P 1986 Phys. Rev. B 34 8950
11. Jain K P, Shukla A K and Abbi S C 1985 Phys. Rev. B 32 5464
12. Olea J, del Prado A, Pastor D, Mrtil I and Gonzlez-Díaz G 2011 J. Appl. Phys. 109 113541
13. Olea J, Gonzlez-Díaz G, Pastor D, Mrtil I, Martí A, Antolín E and Luque A 2011 J. Appl. Phys. 109 063718
14. Antolín E, Martí A, Olea J, Pastor D, Gonzlez-Díaz G, Mrtil I and Luque A 2009 Appl. Phys. Lett. 94 042115
15. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley)
16. Olea J, Toledano-Luque M, Pastor D, San-Andrés E, Mrtil I and Gonzlez-Díaz G 2010 J. Appl. Phys. 107 103524
17. Temple P A and Hathaway C E 1973 Phys. Rev. B 7 3685
18. Lee M C, Huang C R, Chang Y S and Chao Y F 1989 Phys. Rev. B 40 10420
19. Zwick A and Carles R 1993 Phys. Rev. B 48 6024
20. Grein C H, Zollner S and Cardona M 1991 Phys. Rev. B 43 6633
21. Sui Z and Herman I P 1993 Phys. Rev. B 48 17938
22. Geissberger A E and Galeener F L 1983 Phys. Rev. B 28 3266
23. Porto S P S, Fleury P A and Damen T C 1967 Phys. Rev. B 154 522
24. Olea J, Pastor D, Mrtil I, Gonzlez-Díaz G, Ib̃ez J, Cuscó R and Arts L 2010 MRS Fall Meeting vol 1210 pp Q08-16
25. Chenevier B, Chaix-Pluchery O, Matko I, Madar R and La Via F 2001 Microelectron. Eng. 55 115