Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes

Applied Physics B: Lasers and Optics

Volumn 107, Issue 2, 2012, Pages 393-399

  Dylewicz, R ^a,b   Khokhar, A Z ^a   Wasielewski, R ^a,c   Mazur, P ^a,c   Rahman, F ^a,c  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Lam Research AG   (Austria)

^c UNIVERSITY OF WROC AW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-REFLECTION; ANTIREFLECTION LAYERS; COMPUTER MODELLING; GRADED INDEX; GRADED REFRACTIVE INDICES; LIGHT EXTRACTION; NANO-STRUCTURED; PHOTOLUMINESCENCE INTENSITIES; PRISTINE SURFACES; SILICA SPHERE; TEXTURED SURFACE LAYERS;

GALLIUM NITRIDE; SILICA;

LIGHT EMITTING DIODES;

EID: 84861806905     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-012-5017-6     Document Type: Article

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