Simulations of nanograting-assisted light coupling in GaN planar waveguide

Optical and Quantum Electronics

Volumn 42, Issue 9-10, 2011, Pages 619-629

  Dylewicz, R ^a,b   Hogg, R A ^c   Airey, R ^c   Paszkiewicz, R ^a   Bientsman, P ^d   Patela, S ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d GHENT UNIVERSITY   (Belgium)

Author keywords

Dry etching process; Gallium nitride; Grating coupler; III V semiconductor materials; Integrated optics; Numerical simulations; Planar waveguide; Semiconductor processing

Indexed keywords

ARBITRARY SHAPE; COUPLING EFFICIENCY; DRY ETCHING PROCESS; DRY-ETCH; EIGEN-MODE EXPANSION; ETCH DEPTH; GRATING COUPLERS; GRATING PARAMETER; II-IV SEMICONDUCTORS; LIGHT COUPLINGS; NANO-GRATINGS; OPTICAL MODES; REFLECTION AND TRANSMISSION; RIGOROUS MODEL; SEMICONDUCTOR PROCESSING; SIMULATION TOOL; STAIRCASE APPROXIMATION; VISIBLE SPECTRA;

DRY ETCHING; GALLIUM NITRIDE; OPTICAL WAVEGUIDES; PHOTONICS; PLANAR WAVEGUIDES; PLASMA ETCHING; SEMICONDUCTOR MATERIALS;

COMPUTER SIMULATION;

EID: 80052556490     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-011-9485-4     Document Type: Article

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