Disordered antireflective nanostructures on GaN-based light-emitting diodes using Ag nanoparticles for improved light extraction efficiency

Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

  Song, Young Min ^a   Choi, Eun Sil ^a   Park, Gyeong Cheol ^a   Park, Chang Young ^a   Jang, Sung Jun ^a   Lee, Yong Tak ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AG NANOPARTICLE; ANTIREFLECTIVE; ANTIREFLECTIVE NANOSTRUCTURE; AVERAGE SIZE; DRY ETCH PROCESS; FORWARD VOLTAGE; FRESNEL REFLECTIONS; GAN LIGHT-EMITTING DIODES; GAN-BASED LIGHT-EMITTING DIODES; INDIUM TIN OXIDE; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; RIGOROUS COUPLED WAVE ANALYSIS; SUBWAVELENGTH STRUCTURES; THEORETICAL CALCULATIONS;

DRY ETCHING; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOPARTICLES; TIN; TITANIUM COMPOUNDS;

SILVER;

EID: 77956355483     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3488001     Document Type: Article

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