Development and process control of magnetic tunnel junctions for magnetic random access memory devices

Journal of Applied Physics

Volumn 93, Issue 10, 2003, Pages 8373-8375

  Kula, Witold ^a   Wolfman, Jerome ^a   Ounadjela, Kamel ^a   Chen, Eugene ^a   Koutny, William ^a  

^a CYPRESS SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MAGNETIC DEVICES; MAGNETORESISTANCE; PROCESS CONTROL; RANDOM ACCESS STORAGE; SWITCHING;

INTERLAYER COUPLING;

TUNNEL JUNCTIONS;

EID: 0037979065     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1558241     Document Type: Article

References (5)

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3. E. Chen, B. Schwarz, C.-J. Choi, W. Kula, J. Wolfman, K. Ounadjela, and S. Geha, J. Appl. Phys. 93, 8379 (2003), these proceedings.
4. M. F. Gillies, W. Oepts, A. E. T. Kuiper, R. Coehoom, Y. Tamminga, J. H. M. Snijders, and W. M. Bik, IEEE Trans. Magn. 35, 2991 (1999).
5. J. C. S. Kools, W. Kula, D. Mauri, and T. Un, J. Appl. Phys. 85, 4466 (1999).