Performance of shape-varying magnetic tunneling junction for high-speed magnetic random access memory cells

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Honjo, H ^a   Fukami, S ^a   Nebashi, R ^a   Suzuki, T ^a   Ishiwata, N ^a   Miura, S ^a   Sugibayashi, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC COUPLINGS; FREE LAYERS; HIGH ANISOTROPIES; HIGH-SPEED; INTER-LAYER EXCHANGE COUPLINGS; LOW ANISOTROPIES; MAGNETIC RANDOM ACCESS MEMORY CELLS; MAGNETIC TUNNELING JUNCTIONS; MR RATIOS; NONMAGNETIC LAYERS; THERMAL STABILITIES;

ANISOTROPY; COBALT COMPOUNDS; MAGNETIC DEVICES; MAGNETIC FIELDS; MAGNETIC STORAGE; RANDOM ACCESS STORAGE; SUPPORT VECTOR MACHINES; WAVEGUIDE JUNCTIONS;

MAGNETIC MATERIALS;

EID: 65249164451     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3062825     Document Type: Article

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