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Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

Low write-current magnetic random access memory cell with anisotropy-varied free layers

(4) Fukami, S a Honjo, H a Suzuki, T a Ishiwata, N a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; MAGNETIC ANISOTROPY; MAGNETIC PROPERTIES; MAGNETIC STORAGE; SWITCHING FUNCTIONS; THERMODYNAMIC STABILITY;

EXTERNAL FIELDS; FREE LAYERS; HIGH THERMAL STABILITIES; MAGNETIC RANDOM ACCESS MEMORY CELLS; MICROMAGNETIC SIMULATIONS; MRAM CELLS; RANDOM ACCESSES; THERMAL STABILITIES;

RANDOM ACCESS STORAGE;

EID: 58149236505 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3032894 Document Type: Article

Times cited : (5)

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