Reduction of writing field distribution in a magnetic random access memory with toggle switching

IEEE Transactions on Magnetics

Volumn 43, Issue 8, 2007, Pages 3512-3516

  Fukami, Shunsuke ^a   Honjo, Hiroaki ^a   Suzuki, Tetsuhiro ^a   Ishiwata, Nobuyuki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Anisotropy field; Distribution; Flop field; Magnetic random access memory (MRAM); Toggle

Indexed keywords

AMORPHOUS MATERIALS; FERROMAGNETIC MATERIALS; MAGNETIC ANISOTROPY; MAGNETIC FIELD EFFECTS; MAGNETIC STORAGE; MICROFABRICATION; STRESS ANALYSIS;

CRYSTALLINE GRAINS; FERROMAGNETIC LAYERS; FLOP FIELDS; MAGNETIC RANDOM ACCESS MEMORY; MAGNETIC TUNNELS;

RANDOM ACCESS STORAGE;

EID: 34547442860     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2007.900573     Document Type: Article

References (9)

1. L. Savtchenko, A. A. Korkin, B. N. Engel, N. D. Rizzo, M. F. Deherrera, and J. A. Janesky, "Method of Writing to Scalable Magnetoresistance Random Access Memory Element," U.S. Patent 6 545 906 B1, Apr. 8, 2003.
2. D. C. Worledge, "Spin flop switching for magnetic random access memory," Appl. Phys. Lett., vol. 84, pp. 4559-4561, 2004.
3. B. N. Engel, J. Åkerman, B. Butcher, R. W. Dave, M. DeHerrera, M. Durlam, G. Grynkewich, J. Janesky, S. V. Pietambaram, N. D. Rizzo, J. M. Slaughter, K. Smith, J. J. Sun, and S. Tehrani, "A 4-Mb toggle MRAM based on a novel bit and switching method," IEEE Trans. Magn., vol. 41, no. 1, pp. 132-136, Jan. 2005.
4. Y. Fukumoto, T. Suzuki, and S. Tahara, "Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers," Appl. Phys. Lett., vol. 89, p. 061909, 2006.
5. B.D. Culity, Elements ofX-Ray Diffraction. Reading, MA: Addison-Wesley, 1978.
6. G. Herzer, "Grain structure and magnetism of nanocrystalline ferromagnets," IEEE Trans. Magn., vol. 25, no. 5, pp. 3327-3329, Sep. 1989.
7. J. G. Deak and R. H. Koch, "The effect of edge roughness on magnetization reversal in micron-sized permalloy thin films," J. Magn. Magn. Mater., vol. 213, pp. 25-31, 2000.
8. R. P. Cowburn, D. K. Koltsov, A. O. Adeyeye, and M. E. Weiland, "Lateral interface anisotropy in nanomagnets," J. Appl. Phys., vol. 87, pp. 7067-7069, 2000.
9. M. T. Bryan, D. Atkinson, and R. P. Cowburn., "Edge roughness and coercivity in magnetic nanostructures," J. Phys: Conf. Ser., vol. 17, pp. 40-44, 2005.