Standby-power-free compact ternary content-addressable memory cell chip using magnetic tunnel junction devices

Applied Physics Express

Volumn 2, Issue 2, 2009, Pages

  Matsunaga, Shoun ^a   Hlyama, Kimlyuki ^a   Matsumoto, Atsushi ^a   Ikeda, Shoji ^a   Hasegawa, Haruhiro ^a   Miura, Katsuya ^a,b   Hayakawa, Jun ^b   Endoh, Tetsuo ^a   Ohno, Hideo ^a   Hanyu, Takahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; LOGIC GATES; MAGNETIC DEVICES; METALLIC COMPOUNDS; MOS DEVICES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TUNNEL JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

CELL-BASED; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS; DATA BACKUPS; LOGIC-IN-MEMORY ARCHITECTURES; MAGNETIC TUNNEL JUNCTIONS; NON VOLATILES; SPIN INJECTIONS; STANDBY POWER; SUPPLY VOLTAGES; TERNARY CONTENT-ADDRESSABLE MEMORIES;

SEMICONDUCTOR JUNCTIONS;

EID: 60349132341     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.023004     Document Type: Article

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