X-band power performance of N-face GaN MIS-HEMTs

Electronics Letters

Volumn 47, Issue 3, 2011, Pages 214-215

  Wong, M H ^a   Brown, D F ^a   Schuette, M L ^b   Kim, H ^b   Balasubramanian, V ^b   Lu, W ^b   Speck, J S ^a   Mishra, U K ^a  

^a University of California   (United States)

^b Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

2-D ELECTRON GAS (2DEG); ALLOY DISORDER SCATTERING; ALN; CARRIER CONFINEMENTS; CONTINUOUS WAVES; DEVICE-SCALING; DRAIN BIAS; DRAIN EFFICIENCY; GATE LENGTH; HIGH ELECTRIC FIELDS; LARGE-SIGNALS; METAL-INSULATOR-SEMICONDUCTORS; PEAK POWER; POWER PERFORMANCE; SATURATED OUTPUT POWER;

ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRON GAS; GALLIUM ALLOYS; GALLIUM NITRIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79551710219     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.3129     Document Type: Article

References (13)

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