N-Polar GaN/AlN MIS-HEMT with fMAX of 204 GHz for Ka-Band applications

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1683-1685

  Nidhi, ^a   Dasgupta, Sansaptak ^a   Keller, Stacia ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Digital doping; GaN spacer; Metal insulator semiconductor high electron mobility transistor (MIS HEMT); Millimeter wave power; N polar GaN

Indexed keywords

ALLOY SCATTERING; ALN; GAN SPACER; HIGH OUTPUT POWER; KA BAND; LARGE-SIGNALS; LINEAR TRANSDUCERS; LOW-OHMIC CONTACT; METAL-INSULATOR-SEMICONDUCTORS; MILLIMETER-WAVE POWER; MIS-HEMT; N-POLAR GAN; POWER GAINS; POWER-ADDED EFFICIENCY;

GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 81855217354     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2168558     Document Type: Article

References (11)

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