Measurement of channel stress using gate direct tunneling current in uniaxially stressed nMOSFETs

IEEE Electron Device Letters

Volumn 28, Issue 9, 2007, Pages 818-820

  Hsieh, Chen Yu ^a   Chen, Ming Jer ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Mechanical stress; MOSFET; Piezo resistance; Shallow trench isolation (STI); Strain; Tunneling

Indexed keywords

MECHANICAL STRESS; MOSFET; PIEZO RESISTANCE; SHALLOW TRENCH ISOLATION (STI); TUNNELING;

ELECTRIC BREAKDOWN; ELECTRON TUNNELING; SEMICONDUCTING SILICON; SPEECH ANALYSIS; STRESSES;

MOSFET DEVICES;

EID: 40949132144     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.902985     Document Type: Article

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