Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates

Electronics Letters

Volumn 46, Issue 3, 2010, Pages 240-242

  Chyurlia, P N ^a   Semond, F ^c   Lester, T ^b   Bardwell, J A ^b   Rolfe, S ^b   Tang, H ^b   Tarr, N G ^a  

^a CARLETON UNIVERSITY   (Canada)

^b CHREA CNRS   (France)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HFETS; HETEROEPITAXY; MONOLITHIC INTEGRATION; MOSFETS; PROTECTED AREAS;

EPITAXIAL GROWTH; GALLIUM NITRIDE; MONOLITHIC INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING SILICON; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 76249108893     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.3167     Document Type: Article

References (10)

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