Comparison of tunnel junctions for cascaded InAs/GaSb superlattice light emitting diodes

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

  Murray, L M ^a   Norton, D T ^a   Olesberg, J T ^b   Boggess, T F ^a,c   Prineas, J P ^a,c  

^a UNIVERSITY OF IOWA   (United States)

^b University of Iowa   (United States)

^c University of Iowa   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CASCADE CONTROL SYSTEMS; CONDUCTION BANDS; GALLIUM ALLOYS; INDIUM ANTIMONIDES; SUPERLATTICES; TUNNEL JUNCTIONS;

CASCADED STRUCTURE; DOPING LEVELS; HOLE CONFINEMENT; INAS/GASB SUPERLATTICES; JUNCTION DESIGN; STRAIN-FREE; TUNNELING RESISTANCE;

LIGHT EMITTING DIODES;

EID: 84861632560     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3692252     Document Type: Article

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