InAs/GaSb cascaded active region superlattice light emitting diodes for operation at 3.8 μm

Applied Physics Letters

Volumn 92, Issue 12, 2008, Pages

  Koerperick, E J ^a,b   Olesberg, J T ^b,c   Boggess, T F ^a,b   Hicks, J L ^b   Wassink, L S ^b   Murray, L M ^b   Prineas, J P ^b  

^a University of Iowa   (United States)

^b UNIVERSITY OF IOWA   (United States)

^c University of Iowa   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC EXCITATION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; SUPERLATTICES; WET ETCHING;

MIDWAVE INFRARED; PEAK DRIVE CURRENTS; QUASI-DC EXCITATION; ROOM TEMPERATURE;

INDIUM ARSENIDE;

EID: 41349089918     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2892633     Document Type: Article

References (11)

1. L. Esaki and R. Tsu, IBM J. Res. Dev. 14, 61 (1970).
2. N. C. Das, Appl. Phys. Lett. 90, 011111 (2007).
3. A. Krier and M. Fisher, IEE Proc.: Optoelectron. 144, 287 (1997).
4. A. Krier and V. Sherstnev, J. Phys. D 33, 101 (2000).
5. A. Krier, V. Sherstnev, and H. Gao, J. Phys. D 33, 1656 (2000).
6. T. Danilova, B. Zhurtanov, A. Imenkov, and Y. P. Yakovlev, Semiconductors 39, 1281 (2005).
7. D. Hoffman, A. Hood, E. Michel, F. Fuchs, and M. Razeghi, IEEE J. Quantum Electron. 42, 126 (2006).
8. D. Hoffman, A. Gin, Y. Wei, A. Hood, F. Fuchs, and M. Razeghi, IEEE J. Quantum Electron. 41, 1474 (2005).
9. B. H. Yang, D. Zhang, R. Q. Yang, C.-H. Lin, S. J. Murry, and S. S. Pei, Appl. Phys. Lett. 72, 2220 (1998).
10. A. Bracker, M. Yang, B. Bennett, J. Culbertson, and J. Moore, J. Cryst. Growth 220, 384 (2000).
11. N. C. Das, K. Olver, and F. Towner, Solid-State Electron. 49, 1422 (2005).