Long-wave (10 μm) infrared light emitting diode device performance

Solid-State Electronics

Volumn 52, Issue 11, 2008, Pages 1821-1824

  Das, Naresh C ^a   Bradshaw, John ^b   Towner, Fred ^b   Leavitt, R ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Maxion Technologies Inc   (United States)

Author keywords

IR scene projection; LED device; LWIR emitters; Surface emitting devices

Indexed keywords

ELECTROMAGNETIC WAVES; FLIP CHIP DEVICES; LIGHT; LIGHT EMISSION;

DEVICE PERFORMANCES; EMISSION WAVELENGTHS; HIGH-TEMPERATURE; INFRARED LIGHT EMITTING DIODES; INFRARED SCENE GENERATIONS; INJECTION CURRENTS; INTERBAND; IR SCENE PROJECTION; LED DEVICE; LED DEVICES; LED STRUCTURES; LIGHT OUTPUTS; LWIR EMITTERS; QUANTUM CASCADE STRUCTURES; RADIATIVE RECOMBINATIONS; ROOM TEMPERATURE OPERATIONS; ROOM TEMPERATURES; SURFACE EMITTING DEVICES;

LIGHT EMITTING DIODES;

EID: 55049112440     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.003     Document Type: Article

References (18)

1. Shi Z., Tacke M., Lambrecht A., and Bottner H. Mid-infrared lead salt multi quantum well diode lasers with 282 K operation. Appl Phys Lett 66 (1995) 2537
2. Brett Beasley D., Saylor D.A., and Bufford J. Overview of dynamic scene projectors at the U.S. Army aviation and missile command. Proc SPIE 4717 (2002) 136
3. Zhang D., DuPont E., Yang R.Q., Liu H.C., Lin H., Buchannan M., et al. Long wave length infrared (10-12 μm) electroluminescence from Sb based interband cascade device. Opt Exp 1 (1991) 97
4. Cole B., et al. Large area infrared micro emitter arrays for dynamic scene projection. Proc SPIE 3368 (1998) 57
5. McHugh S., Robinson R., Parish B., and Woolaway J. Proc SPIE 4027 (2000) 399
6. Driggers R., Barnard K., Burroughs E., Deep R.G., and Williams O. Review of infrared scene projector technology. Opt Eng 33 (1994) 2408
7. Das N.C. Increase in mid-wave infrared light emitting diode light output due to substrate thinning and texturing. Appl Phys Lett 90 (2007) 111111
8. Beasley D.B., et al. Dynamic IR scene projector based upon the digital micromirror device. Proc SPIE 4366 (2001) 96
9. Das N.C., and Tobin M.S. Performance of mid-wave infrared (3.8 μm) light emitting diode device. Solid State Electron 50 (2006) 1612
10. Meyer J.R., Hoffman C.A., Bartoli F.J., and Ram Mohan L.R. Type II quantum well lasers for the mid infrared. Appl Phys Lett 7 (1995) 757
11. Yang R.Q., Lin C., Murry S.J., and Pei S.S. Interband cascade light emitting diodes in the 5-8 μm spectrum region. Appl Phys Lett 70 (1997) 2013
12. Zegrya G.G., and Andreev A.D. Mechanism of suppression of Auger recombination processes in type-II heterostructures. Appl Phys Lett 67 (1995) 2681
13. Pidgeon C.R., Ciesla C.M., and Murdin B.N. Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectors. Prog Quant Electron 21 (1998) 361
14. Stringfellow GB, Craford MG. High brightness light emitting diode. Semiconductors and semimetals, vol. 48; 1997. p. 469.
15. Krier A., Gao H.H., Sherstnev V.V., and Yakovlev Y. J Appl Phys D 32 (1999) 3117
16. Horikoshi Y. In: Tsang W.T. (Ed). Semiconductors and semimetals vol. 22C (1985), Academic, New York [chapter 3]
17. Smith D.L., and Mailhoit C.M. J Appl Phys 62 (1987) 2545
18. Faist J., Capasso F., Sirtori C., Sivco D.L., Hutchinson A.L., Chu S.N., et al. Appl Phys Lett 64 (1994) 1144