2 μm GaInAsSb/AlGaAsSb midinfrared laser grown digitally on GaSb by modulated-molecular beam epitaxy

Journal of Applied Physics

Volumn 88, Issue 10, 2000, Pages 5543-5546

  Mourad, C ^a   Gianardi, D ^b   Malloy, K J ^a   Kaspi, R ^c  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b BOEING COMPANY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042758718     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1319967     Document Type: Article

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