High-power MWIR cascaded InAs-GaSb superlattice LEDs

IEEE Journal of Quantum Electronics

Volumn 45, Issue 7, 2009, Pages 849-853

  Koerperick, Edwin J ^a,b   Olesberg, Jonathan T ^c,d   Hicks, James L ^b,e   Prineas, John P ^b   Boggess Jr , Thomas F ^a,b  

^a University of Iowa   (United States)

^b UNIVERSITY OF IOWA   (United States)

^c The University of Iowa   (United States)

^d ASL Analytical Inc   (United States)

^e ARKANSAS STATE UNIVERSITY   (United States)

Author keywords

Electroluminescence; Light emitting diodes (LEDs); Semiconductor growth; Semiconductor superlattices

Indexed keywords

ACTIVE REGIONS; CARRIER LEAKAGE; DC EXCITATION; DEVICE SIZES; ELECTRONIC CHARACTERISTICS; HIGH-POWER; IMMERSION LENS; INAS; INJECTION CURRENTS; IR EMITTERS; LIGHT-EMITTING DIODES (LEDS); MATERIAL SYSTEMS; MID-WAVE IR; OUTPUT POWER; SOLID SOURCE MOLECULAR BEAM EPITAXY; THERMAL MANAGEMENT;

CRYSTAL GROWTH; CURRENT DENSITY; ELECTROLUMINESCENCE; GALLIUM ALLOYS; INDIUM ARSENIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTOR SUPERLATTICES;

EID: 67449099793     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2013176     Document Type: Article

References (14)

1. C. Grein, M. Flatté, J. Olesberg, S. Anson, L. Zhang, and T. Boggess, "Auger recombination in narrow-gap semiconductor superlattices incorporating antimony," J. Appl. Phys., vol. 92, no. 12, pp. 7311-7316, 2002.
2. M. E. Flatté, P. M. Young, L. H. Peng, and H. Ehrenreich, "Generalized superlattice k·p theory and intersubband optical transitions," Phys. Rev. B, vol. 53, no. 4, pp. 1963-1978, Jan. 1996.
3. A. Krier and V. Sherstnev, "Powerful interface light emitting diodes for methane gas detection," J. Phys. D: Appl. Phys., vol. 33, no. 2, pp. 101-106, 2000.
4. A. Krier, H. Gao, V. Sherstnev, and Y. Yakovlev, "High power 4.6 μm light emitting diodes for CO detection," J. Phys. D: Appl. Phys., vol. 32, no. 15, pp. 3117-3121, 1999.
5. 2S at 3.8 μm," J. Phys. D: Appl. Phys., vol. 33, no. 14, pp. 1656-1661, 2000.
6. A. Krier and V. V. Sherstnev, "The influence of melt purification and structure defects on midinfrared light emitting diodes," J. Phys. D: Appl. Phys., vol. 36, no. 13, pp. 1484-1488, 2003.
7. T. Danilova, B. Zhurtanov, A. Imenkov, and Y. P. Yakovlev, "Light-emitting diodes based on GaSb alloys for the 1.6-4.4 μm midinfrared spectral range," Semiconductors, vol. 39, no. 11, pp. 1281-1311, 2005.
8. A. Krier, H. Gao, and V. Sherstnev, "Investigation of rare earth gettering for the fabrication of improved midinfrared LEDs," Proc. IEE Optoelectron., vol. 147, no. 3, pp. 217-221, 2000.
9. B. H. Yang, D. Zhang, R. Q. Yang, C.-H. Lin, S. J. Murry, and S. S. Pei, "Mid-infrared interband cascade lasers with quantum efficiencies>200%," Appl. Phys. Lett., vol. 72, no. 18, p. 2220, 1998.
10. N. C. Das, K. Olver, F. Towner, G. Simonis, and H. Shen, "Infrared (3.8 μm) interband cascade light-emitting diode array with record high efficiency," Appl. Phys. Lett., vol. 87, 2005, art. id. 041105.
11. N. Das, "Increase in midwave infrared light emitting diode light output due to substrate thinning and texturing," Appl. Phys. Lett., vol. 90, no. 1, 2007, art. id. 011111.
12. E. J. Koerperick, J. T. Olesberg, T. Boggess, J. L. Hicks, L. S. Wassink, L. M. Murray, and J. P. Prineas, "InAs/GaSb cascaded active region superlattice light emitting diodes for operation at 3.8 μm," Appl. Phys. Lett., vol. 92, p. 121106, 2008.
13. E. J. Koerperick, J. T. Olesberg, J. L. Hicks, J. P. Prineas, and T. Boggess, "Active region cascading for improved performance in InAs/GaSb superlattice LEDs," IEEE J. Quantum Electron., vol. 44, no. 12, pp. 1242-1247, Dec. 2008.
14. A. Krier and X. L. Huang, "Design considerations for uncooled InAs midinfrared light emitting diodes grown by liquid phase epitaxy," J. Phys. D: Appl. Phys., vol. 39, pp. 255-261, 2006.