Type I mid-infrared MQW lasers using AlInAsSb barriers and InAsSb wells

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5722, Issue , 2005, Pages 307-318

  Vaughn, Leslie G ^a   Dawson, L Ralph ^a   Pease, Edwin A ^b   Lester, Luke F ^a   Xu, Huifang ^a   Jiang, Yingbing ^a   Gray, Alan L ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b Zia Laser Incorporated   (United States)

Author keywords

AlGalnAsSb; AlInAsSb; Digital alloy; InAsSb; Mid infrared; Quaternary; Quinary; Type I laser

Indexed keywords

ALGAINASSB; ALINASSB; DIGITAL ALLOYS; INASSB; MID-INFRARED; QUATERNARY; QUINARY; TYPE-I LASERS;

ALUMINUM COMPOUNDS; AUGER ELECTRON SPECTROSCOPY; GAS SENSING ELECTRODES; HETEROJUNCTIONS; MOLECULAR SPECTROSCOPY; OPTICAL RADAR; PHOTOLUMINESCENCE;

QUANTUM WELL LASERS;

EID: 23744453366     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.606226     Document Type: Conference Paper

References (13)

1. M. E. Flatte, J. T. Olesberg, S. A. Anson, T. F. Boggess, T. C. Hasenberg, R. H. Miles and C. H. Grein, "Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers", Appl. Phys. Lett. 70, 3212-3214, 1997.
2. L. A. Coldren and S. W. Corzine, in Diode Lasers and Photonic Integrated Circuits, p. 532, John Wiley & Sons, Inc., New York, 1995.
3. H. K. Choi and G. W. Turner, "InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9μm", Appl. Phys. Lett. 67, 332-334, 1995.
4. H. K. Choi, G. W. Turner, M. J. Manfra and M. K. Connors, "175K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5μm", Appl. Phys. Lett. 68, 2936-2938, 1996.
5. G. W. Turner, M. J. Manfra, H. K. Choi and M. K. Connors, "MBE growth of high-power InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5μm", J. Crystal Growth 175/176, 825-832, 1997.
6. M. Kudo and T. Mishima, "MBE growth of Si-doped InAlAsSb layers lattice-matched to InAs", J. Crystal Growth 175, 844-848, 1997.
7. y/GaSb heterojunctions and multilayers grown by molecular beam epitaxy for effective-mass superlattices", J. Vac. Sci. Technol. B 16, 1385-1388, 1998.
8. J. R. Chang, Y. K. Su, D. H. Jaw, H. P. Shiao, W. Lin, "Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of AlInAsSb and AlInAsSb/InGaAs multiple-quantum-well structures", J. Crystal Growth 203, 481-485, 1999.
9. 1-y molecular-beam epitaxial layers", J. Appl. Phys. 73, 8227-8236, 1993.
10. S. R. Kurtz and R. M. Biefeld, "Magnetophotoluminescence of biaxially compressed InAsSb quantum wells", Appl. Phys. Lett. 66, 364-366, 1995.
11. x ", Phys. Rev. B 51, 7310-7313, 1995.
12. S. R. Kurtz, R. M. Biefeld and A. J. Howard, "Magneto-optical determination of light-heavy hole splittings in As-rich InAsSb alloys and superlattices", Appl. Phys. Lett 67, 3331-3333, 1995.
13. R. Kaspi and G. P. Donati, "Digital alloy growth in mixed As/Sb heterostructures", J. of Crystal Growth 251, 515-520, 2003.