Background limited performance of long wavelength infrared focal plane arrays fabricated from M-Structure InAs-GaSb superlattices

IEEE Journal of Quantum Electronics

Volumn 45, Issue 2, 2009, Pages 157-162

  Delaunay, Pierre Yves ^a   Nguyen, Binh Minh ^a   Hoffman, Darin ^a   Huang, Edward Kwei Wei ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

Focal plane array; Infrared; Photodetectors; Type II superlattice

Indexed keywords

ANTI REFLECTIVE COATINGS; BACKGROUND LIMITED PERFORMANCE; DYNAMIC RANGE; INAS; INFRARED PHOTODETECTOR; LONG-WAVELENGTH INFRARED; NOISE EQUIVALENT TEMPERATURE DIFFERENCE; READOUT INTEGRATED CIRCUITS; STRUCTURE DESIGN; TESTING SYSTEMS; TYPE-II SUPERLATTICES;

FOCAL PLANE ARRAYS; GALLIUM ALLOYS; INTEGRATED CIRCUIT TESTING; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING INDIUM; SUPERLATTICES;

FOCUSING;

EID: 76249121187     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2008.2002667     Document Type: Article

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