Cascaded superlattice InAs/GaSb light-emitting diodes for operation in the long-wave infrared

IEEE Journal of Quantum Electronics

Volumn 47, Issue 1, 2011, Pages 50-54

  Koerperick, Edwin J ^a   Norton, Dennis T ^b   Olesberg, Jonathon T ^c   Olson, Benjamin V ^b   Prineas, John P ^b   Boggess, Thomas F ^a  

^a Optical Science and Technology Center   (United States)

^b UNIVERSITY OF IOWA   (United States)

^c University of Iowa   (United States)

Author keywords

Electroluminescence; light emitting diodes; semiconductor growth; semiconductor superlattices

Indexed keywords

ACTIVE REGIONS; CURRENT EFFICIENCY; DRIVE CURRENTS; DUTY CYCLES; INAS/GASB; INAS/GASB SUPERLATTICES; LONGWAVE INFRARED; N-DOPED; OPTICAL OUTPUT; OUTPUT POWER; PEAK EMISSION WAVELENGTH;

DIODES; ELECTROLUMINESCENCE; GALLIUM ALLOYS; INDIUM ANTIMONIDES; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; TUNNEL JUNCTIONS;

SEMICONDUCTOR SUPERLATTICES;

EID: 78650132027     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2072492     Document Type: Article

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