Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 282, Issue , 2012, Pages 88-91

  Khamsuwan, J ^a   Intarasiri, S ^a   Kirkby, K ^b   Chu, P K ^c   Singkarat, S ^a,d   Yu, L D ^a,d  

^a CHIANG MAI UNIVERSITY   (Thailand)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^d Thailand Ministry of Science and Technology   (Thailand)

Author keywords

Heavy ion beam annealing (HIBA); Ion beam synthesis; Ion implantation; Photoluminescence; Silicon carbide (SiC)

Indexed keywords

CARBON IONS; ELEVATED TEMPERATURE; FLUENCES; HEAVY-ION-BEAM ANNEALING (HIBA); ION BEAM SYNTHESIS; NANOCRYSTALLINES; QUANTUM CONFINEMENT EFFECTS; SINGLE CRYSTALLINE SILICON; VIOLET BANDS; XENON IONS;

ANNEALING; HEAVY IONS; INFRARED SPECTROSCOPY; ION BEAMS; ION IMPLANTATION; NANOCRYSTALS; PHOTOLUMINESCENCE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SILICON CARBIDE;

EID: 84861610646     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2011.08.058     Document Type: Conference Paper

References (25)

1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Electronic Archive: "New Semiconductor Materials: Characteristics and Properties", 2001. http://www.ioffe.ru/SVA/NSM/Semicond/SiC/.
2. R. Madar Nature 430 2004 974
3. S. Intarasiri, A. Hallén, A. Razpet, S. Singkarat, and G. Possnert Solid State Phenom. 107 2005 51
4. W. Wesch Nucl. Instrum. Meth. B 116 1996 305
5. J.A. Borders, S.T. Picraux, and W. Bcezhold Appl. Phys. Lett. 18 1971 509
6. E. Theodossiu, H. Baumann, E.K. Polychroniadis, and K. Bethge Nucl. Instrum. Meth. B 161-163 2000 941
7. S. Intarasiri, L.D. Yu, S. Singkarat, A. Hallén, J. Lu, M. Ottosson, J. Jensen, and G. Possnert J. Appl. Phys. 101 2007 084311
8. A. Benyagoub Nucl. Instrum. Meth. B 266 2008 2766
9. Z.J. Zhang, K. Narumi, H. Naramoto, S. Yamamoto, and A. Miyashita J. Phys. D Appl. Phys. 32 1999 2236
10. J.I. Langford, and A.J.C. Wilson J. Appl. Crystallogr. 11 1978 102
11. W. Wu, D.H. Chen, J.B. Xu, W.Y. Cheng, S.P. Wong, I.H. Wilson, and R.W.M. Kwok J. Vac. Sci. Technol. A 16 3 1998 968
12. Y. Ito, T. Yamacuhi, A. Yamamoto, M. Sasase, S. Nishio, K. Yasuda, and Y. Ishigami Appl. Surf. Sci. 238 2004 159
13. S. Intarasiri, A. Hallén, J. Lu, J. Jensen, L.D. Yu, K. Bertilsson, M. Wolborski, S. Singkarat, and G. Possnert Appl. Surf. Sci. 253 2007 4836
14. Y.S. Katharria, S. Kumar, F. Singh, J.C. Pivin, and D. Kanjilal J. Phys. D Appl. Phys. 39 2006 3969
15. T. Zorba, D.I. Siapkas, and C.C. Katsidis Microelectron. Eng. 28 1995 229
16. J. Khamsuwan, S. Intarasiri, K. Kirkby, C. Jeynes, P.K. Chu, T. Kamwanna, L.D. Yu, Surf. Coat. Technol. (2011), doi:10.1016/j.surfcoat.2011.04.058.
17. N.P. Barradas, C. Jeynes, and R.P. Webb Appl. Phys. Lett. 71 1997 291
18. Chris Jeynes, The IBA DataFurnace Homepage, 2005. http://www.ee.surrey. ac.uk/IBC/ndf/.
19. S. Intarasiri, T. Kamwanna, A. Hallén, L.D. Yu, M.S. Janson, C. Thongleum, G. Possnert, and S. Singkarat Nucl. Instrum. Meth. B 249 2006 859
20. James F. Ziegler, SRIM-The Stopping and Range of Ions in Matter, in: Particle Interaction with Matter, 2009. http://www.srim.org/#SRIM.
21. J.Y. Fan, X.L. Wu, and P.K. Chu Prog. Mater. Sci. 51 2006 983
22. K.H. Lee, S.K. Lee, and K.S. Jeon Appl. Surf. Sci. 255 2009 4414
23. J. Xu, L. Yang, Y.J. Rui, J.X. Mei, X. Zhang, W. Li, Z.Y. Ma, L. Xu, X.F. Huang, and K.J. Chen Solid State Commun. 133 2005 565
24. D.H. Feng, Z.Z. Xu, T.Q. Jia, X.X. Li, and S.Q. Gong Phys. Rev. B 68 2003 035334
25. J.S. Shor, L. Bemis, A.D. Kuttz, I. Grimberg, B.Z. Weiss, M.F. MacMillian, and W.J. Choyke J. Appl. Phys. 76 1994 7 4045