RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 859-864

  Intarasiri, S ^a   Kamwanna, T ^a   Hallen A ^b   Yu, L D ^a   Janson, M S ^c   Thongleum, C ^a   Possnert, G ^d   Singkarat, S ^a  

^a CHIANG MAI UNIVERSITY   (Thailand)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UPPSALA UNIVERSITY   (Sweden)

Author keywords

Depth profile; Dose; Elastic recoil detection analysis (ERDA); Rutherford backscattering spectrometry (RBS); Silicon; Silicon carbide (SiC)

Indexed keywords

ANNEALING; COMPUTER SIMULATION; ION BEAMS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SYNTHESIS (CHEMICAL);

CARBON IONS; DEPTH PROFILE; DOSE; ELASTIC RECOIL DETECTION ANALYSIS (ERDA);

SILICON CARBIDE;

EID: 33745966076     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.03.182     Document Type: Article

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