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Volumn 255, Issue 8, 2009, Pages 4414-4420

Photoluminescent properties of silicon carbide and porous silicon carbide after annealing

Author keywords

Annealing; Photoluminescent; Porous silicon carbides; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; ARGON; CHEMICAL DETECTION; NANOSTRUCTURES; PHOTOELECTRONS; PHOTONS; PORE SIZE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 58349112116     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.11.047     Document Type: Article
Times cited : (37)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.