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Volumn 255, Issue 8, 2009, Pages 4414-4420
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Photoluminescent properties of silicon carbide and porous silicon carbide after annealing
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Author keywords
Annealing; Photoluminescent; Porous silicon carbides; X ray photoelectron spectroscopy
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Indexed keywords
ANNEALING;
ARGON;
CHEMICAL DETECTION;
NANOSTRUCTURES;
PHOTOELECTRONS;
PHOTONS;
PORE SIZE;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
WIDE BAND GAP SEMICONDUCTORS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ANNEALING TEMPERATURES;
ELECTRONIC ENVIRONMENTS;
GREEN PHOTOLUMINESCENCE;
PHOTO-LUMINESCENT PROPERTIES;
PHOTOLUMINESCENT;
QUANTUM SIZE EFFECTS;
VACUUM CONDITION;
VACUUM ENVIRONMENT;
POROUS SILICON;
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EID: 58349112116
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2008.11.047 Document Type: Article |
Times cited : (37)
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References (13)
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