Ion beam synthesis of silicon carbide

Solid State Phenomena

Volumn 107, Issue , 2005, Pages 51-54

  Intarasiri, S ^a,d   Hallen A ^b   Razpet, A ^c   Singkarat, S ^a   Possnert, G ^d  

^a CHIANG MAI UNIVERSITY   (Thailand)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c JO EF STEFAN INSTITUTE   (Slovenia)

^d UPPSALA UNIVERSITY   (Sweden)

Author keywords

Elastic recoil detection analysis (ERDA); Infrared spectroscopy; Ion beam synthesis (IBS); Raman spectroscopy; Silicon; Silicon carbide (SiC)

Indexed keywords

ANNEALING; CARBON; CRYSTALLIZATION; SILICON CARBIDE; SUBSTRATES; SYNTHESIS (CHEMICAL);

SILICON SUBSTRATES; THIN NEAR-SURFACE LAYERS;

ION BEAMS;

EID: 24944434772     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.107.51     Document Type: Conference Paper

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