X-ray and Fourier transformed infrared investigation of β-SiC growth by ion implantation

Journal of Physics D: Applied Physics

Volumn 32, Issue 17, 1999, Pages 2236-2240

  Zhang, Z J ^a   Narumi, K ^a   Naramoto, H ^a   Yamamoto, S ^a   Miyashita, A ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; SILICON WAFERS; X RAY CRYSTALLOGRAPHY;

CRYSTALLINE QUALITY;

SILICON CARBIDE;

EID: 0032667053     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/17/313     Document Type: Article

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