Irradiation effects induced in silicon carbide by low and high energy ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 12-13, 2008, Pages 2766-2771

  Benyagoub, A ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

Ion radiation effects; Radiation damage (amorphization); Recrystallization; Silicon carbide

Indexed keywords

AMORPHIZATION; ION BOMBARDMENT; MOLECULAR DYNAMICS; MOLECULAR MODELING; RADIATION DAMAGE; RECRYSTALLIZATION (METALLURGY);

ION BEAM IRRADIATION; THERMAL SPIKE MODELS;

SILICON CARBIDE;

EID: 44649151064     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.03.113     Document Type: Article

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