Vapor deposition of highly conformal copper seed layers for plating through-silicon vias (TSVs)

Journal of the Electrochemical Society

Volumn 159, Issue 6, 2012, Pages

  Au, Yeung ^a   Min Wang, Qing ^b   Li, Huazhi ^b   Lehn, Jean Sebastien M ^b   Shenai, Deo V ^b   Gordon, Roy G ^a  

^a HARVARD UNIVERSITY   (United States)

^b Dow Electronic Materials   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION PROPERTIES; ALLOY FILM; COPPER DIFFUSION BARRIER; COPPER SEED; CVD PROCESS; INSULATING LAYERS; MANGANESE NITRIDES; POST DEPOSITION ANNEALING; RAPID ATOMIC LAYER DEPOSITIONS; SEED LAYER; SILICA SURFACE; THROUGH SILICON VIAS;

ADHESION; ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; COPPER; DIRECT INJECTION; IODINE; MANGANESE; NITRIDES; SILICA; VAPORS;

ATOMIC LAYER DEPOSITION;

EID: 84861392529     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.097206jes     Document Type: Article

References (17)

1. E. Beyne, Proceedings of the IEEE International Interconect Technology Conference (IITC) IEEE, 1 (2006).
2. R. Havemann and J. Hutchby, Proc. IEEE 89, 586 (2011). 10.1109/5.929646
3. J. Van Olmen, A. Mercha, G. Katti, C. Huyghebaert, J. Van Aelst, E. Seppala, Z. Chao, S. Armini, J. Vaes, R. C. Teixeira, M. Van Cauwenberghe, P. Verdonck, K. Verhemeldonck, A. Jourdain, W. Ruythooren, M. de Potter de ten Broeck, A. Opdebeeck, T. Chiarella, B. Parvais, I. Debusschere, T. Y. Hoffmann, B. De Wachter, W. Dehaene, M. Stucchi, M. Rakowski, P. Soussan, R. Cartuyvels, E. Beyne, S. Biesemans, and B. Swinnen, IEDM Tech. Dig., 603 (2011).
4. The International Technology Roadmap for Semiconductors (2009).
5. S. Armini, Z. El-Mekki, K. Vandersmissen, H. Philipsen, S. Rodet, M. Honore, A. Radisic, Y. Civale, E. Beyne, and L. Leunissen, J. Electrochem. Soc., 158 (2), H160 (2011). 10.1149/1.3518439
6. D. Hausmann, J. Becker, S. Wang, and R. G. Gordon, Science, 298, 402 (2002). 10.1126/science.1073552
7. Y. Au, Y. Lin, and R. G. Gordon, J. Electrochem. Soc., 158 (5), D248 (2011). 10.1149/1.3556699
8. P. de Rouffignac, Z. Li, and R. G. Gordon, Electrochem. Solid-State Lett. 7 (12), G306 (2004). 10.1149/1.1814594
9. Z. G. Xiao, Rev. Sci. Instrum. 74 (8), 3879 (2003). 10.1063/1.1589157
10. E. Andideh, J. Blaine, C. Block, B. Jin, T. Scherban, and B. Sun, Proc. IEEE 2001 Int. Interconnect Technology Conf., 257 (2001).
11. Y. Au, Y. Lin, H. Kim, E. Beh, Y. Liu, and R. G. Gordon, J. Electrochem. Soc. 157 (6), D341 (2010). 10.1149/1.3364799
12. Q. Ma, H.-S. Guo, R. G. Gordon, and F. Zaera, Chem. Mater. 22 (2), 352 (2010). 10.1021/cm9027447
13. E. S. Hwang and J. Lee, Chem. Mater. 12, 2076 (2000). 10.1021/cm990805+
14. M. Lane, E. Liniger, and J. Lloyd, J. Appl. Phys., 93, 1417 (2003). 10.1063/1.1532942
15. R. G. Gordon, H. Kim, Y. Au, H. Wang, H. B. Bhandari, Y. Liu, D. K. Lee, and Y. Lin, Advanced Metallization Conference 2008 XXIV, 321 (2009).
16. J. Iijima, M. Haneda, and J. Koike, IEEE Int. Interconnect Technol. Conf., Proc., 155 (2006); J. Koike and M. Wada, Appl. Phys. Lett., 87, 041911 (2005).
17. Z. Li, A. Rahtu, and R. G. Gordon, J. Electrochem. Soc., 153 (11), C787 (2006). 10.1149/1.2338632