Growth behavior of self-formed barrier using Cu-Mn alloys at 350 to 600°C

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 155-158

  Iijima, J ^b   Haneda, M ^a   Koike, J ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FILMS; DIELECTRIC LAYERS; DIFFUSION BARRIER LAYER; DIFFUSIVITY; ELEVATED TEMPERATURES; GRAIN BOUNDARIES; GROWTH BEHAVIOR; INTER-DIFFUSION; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; RATE LAWS;

ANNEALING; COPPER; COPPER ALLOYS; DIFFUSION; FILM GROWTH; GRAIN GROWTH; MANGANESE; MANGANESE ALLOYS; MANGANESE COMPOUNDS; METALLIC COMPOUNDS; METALLIC FILMS; TECHNOLOGY;

ALLOYS;

EID: 50249114663     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648675     Document Type: Conference Paper

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