Void-free filling of HAR TSVs using a wet alkaline Cu seed on CVD Co as a replacement for PVD Cu seed

Journal of the Electrochemical Society

Volumn 158, Issue 2, 2011, Pages

  Armini, S ^a   El Mekki, Z ^a   Vandersmissen, K ^a   Philipsen, H ^a   Rodet, S ^a   Honore, M ^a   Radisic, A ^a   Civale, Y ^a   Beyne, E ^a   Leunissen, L ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION PROMOTER; BIS(3-SULFOPROPYL) DISULFIDE; DEPOSITION PROCESS; HIGH ASPECT RATIO; JANUS GREEN B; PLATED FILMS; SEED LAYER; THROUGH-SILICON-VIA; VOID-FREE;

ASPECT RATIO; COBALT; COPPER; COPPER PLATING; ETHYLENE; ETHYLENE GLYCOL; POLYETHYLENE GLYCOLS; POLYETHYLENE OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

CHEMICAL VAPOR DEPOSITION;

EID: 78650745821     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3518439     Document Type: Article

References (30)

1. E. Beyne, in Proceedings of the IEEE International Interconnect Technology Conference (IITC), IEEE, pp. 1-5 (2006).
2. E. Beyne, in IEEE Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papers, IEEE, Vol. 19 (2006).
3. J. P. Healy, D. Pletcher, and M. Goodenough, J. Electroanal. Chem. JECHES 0022-0728, 338, 155 (1992). 10.1016/0022-0728(92)80420-9
4. J. J. Kelly, C. Tian, and A. C. West, J. Electrochem. Soc. JESOAN 0013-4651, 146, 2540 (1999). 10.1149/1.1391968
5. T. P. Moffat, J. E. Bonevich, W. H. Huber, A. Stanishevsky, D. R. Kelly, G. R. Stafford, and D. Josell, J. Electrochem. Soc. JESOAN 0013-4651, 147, 4524 (2000). 10.1149/1.1394096
6. P. Taephaisitphongse, Y. Cao, and A. C. West, J. Electrochem. Soc. JESOAN 0013-4651, 148, C492 (2001). 10.1149/1.1376636
7. P. M. Vereecken, R. A. Binstead, H. Deligianni, and P. C. Andricacos, IBM J. Res. Dev. IBMJAE 0018-8646, 49, 3 (2005). 10.1147/rd.491.0003
8. T. P. Moffat, D. Wheeler, S.-K. Kim, and D. Josell, J. Electrochem. Soc. JESOAN 0013-4651, 153, C127 (2006). 10.1149/1.2165580
9. O. Lühn, J.-P. Celis, C. Van Hoof, K. Baert, and W. Ruythooren, ECS Trans. ECSTF8 1938-5862, 6 (8), 123 (2007). 10.1149/1.2794459
10. O. Lühn, A. Radisic, P. M. Vereecken, B. Swinnen, C. Van Hoof, W. Ruythooren, and J.-P. Celis, in Proceedings of the 58th Electronic Components and Technology Conference (ECTC), IEEE CPMT, Lake Buena Vista, FL, May 27-30, 2008, pp. 866-870 (2008).
11. G. Druais, G. Dilliway, P. Fischer, E. Guidotti, O. Lühn, A. Radisic, and S. Zahraoui, Microelectron. Eng. MIENEF 0167-9317, 85, 1957 (2008). 10.1016/j.mee.2008.06.004
12. O. Lühn, A. Radisic, P. M. Vereecken, C. Van Hoof, W. Ruythooren, and J.-P. Celis, Electrochem. Solid-State Lett. ESLEF6 1099-0062, 12, D39 (2009). 10.1149/1.3087790
13. A. Radisic, O. Lühn, B. Swinnen, H. Bender, C. Drijbooms, G. Doumen, K. Kellens, W. Ruythooren, and P. M. Vereecken, in Materials Research Society Symposium Proceedings, Vol. 1112, pp. 159-164, MRS Fall Meeting, Dec. 1-3, 2008, Boston, MA (2008).
14. M. J. Wolf, T. Dretschkow, B. Wunderle, N. Jürgensen, G. Engelmann, O. Ehrmann, A. Uhlig, B. Michel, and H. Reichl, in 2008 Electronic Components and Technology Conference, IEEE, p. 563 (2008).
15. S. Gandikota, S. Voss, R. Tao, A. Duboust, D. Cong, L.-Y. Chen, S. Ramaswami, and D. H. Carl, J. Mater. Res. JMREEE 0884-2914, 17, 2394 (2002). 10.1557/JMR.2002.0350
16. P.-H. Haumesser, A. Roule, S. Maitrejean, and G. Passemard, Future Fab. Intl., 19, (2005).
17. S. Armini and P. M. Vereecken, ECS Trans. ECSTF8 1938-5862, 25 (27), 185 (2010). 10.1149/1.3318517
18. G. Prentice, Electrochemical Engineering Principles, Prentice-Hall, Englewood Cliffs, NJ (1991).
19. L. Chen and T. Ritzdorf., Semiconductor Fabtech, 12th ed., p. 267 (2000).
20. R. H. Dauskardt, M. Lane, Q. Ma, and N. Krishna, Eng. Fract. Mech. EFMEAH 0013-7944, 61, 141 (1998). 10.1016/S0013-7944(98)00052-6
21. P. G. Charalambides, J. Lund, A. G. Evans, and R. M. McMeeking, J. Appl. Mech. JAMCAV 0021-8936, 56, 77 (1989). 10.1115/1.3176069
22. B. D. Cullity, Elements of X-ray Diffraction, Addison-Wesley, London (1978).
23. T.-J. Cheng, Z. Li, K. H. Wong, and H. Zhu, Pat. WO/2010/019490.
24. I. C. Noyan and J. B. Cohen, Residual Stress. Measurement by Diffraction and Interpretation, Springer-Verlag, New York (1987).
25. K. Zhang, J. R. Weertman, and J. A. Eastman, Appl. Phys. Lett. APPLAB 0003-6951, 87, 061921 (2005). 10.1063/1.2008377
26. A. Bhatnagar, K. Sapre, J. Hua, M. Hernandez, L. Luo, Z. Cui, and S. Venkataraman, Nanochip Technol. J., 1, 1 (2010).
27. O. Lühn, Ph.D. Thesis, Katholieke Universiteit Leuven, Leuven, Belgium (2009).
28. Y.-B. Li, W. Wang, and Y.-L. Li, J. Electrochem. Soc. JESOAN 0013-4651, 156, D119 (2009). 10.1149/1.3071603
29. M. Hasegawa, Y. Negishi, and T. Naganishi, J. Electrochem. Soc. JESOAN 0013-4651, 152, C221 (2005). 10.1149/1.1867672
30. W.-P. Dow, C.-C. Li, M.-W. Lin, G.-W. Su, and C.-C. Huang, J. Electrochem. Soc. JESOAN 0013-4651, 156, D314 (2009). 10.1149/1.3147273