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Volumn 26, Issue 2, 2011, Pages 119-128

Characterization of the junction capacitance in metal-semiconductor interface states

Author keywords

Barrier height; Capacitance; Energy conversion; Ideality factor; Schottky contact

Indexed keywords

AC SIGNALS; BARRIER HEIGHTS; CALCULATED VALUES; CAPACITANCE VALUES; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; FORWARD BIAS; HIGH FREQUENCY; IDEALITY FACTORS; INTERFACE LAYER; IV CHARACTERISTICS; JUNCTION CAPACITANCES; LOW FREQUENCY; METAL SEMICONDUCTOR INTERFACE; SCHOTTKY CONTACTS; SERIES RESISTANCES;

EID: 84861174420     PISSN: 1308772X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (25)

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