Effect of the tunnelling oxide thickness and density on the performance of MIS photodiodes

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 361-365

  Aguas H ^a   Goullet, A ^b   Pereira, L ^a   Fortunato, E ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

a Si:H; MIS; Photodiodes; Schottky

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON TUNNELING; ELLIPSOMETRY; EVAPORATION; MISFET DEVICES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SIGNAL TO NOISE RATIO;

A-SI:H; METAL-INSULATOR-SEMICONDUCTOR (MIS); SCHOTTKY;

PHOTODIODES;

EID: 1442286767     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.013     Document Type: Conference Paper

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